Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

被引：47

作者：

Bavencove, A. -L. ^{[1
]}

Salomon, D. ^{[1
]}

Lafossas, M. ^{[1
]}

Martin, B. ^{[1
]}

Dussaigne, A. ^{[1
]}

Levy, F. ^{[1
]}

Andre, B. ^{[1
]}

Ferret, P. ^{[1
]}

Durand, C. ^{[2
]}

Eymery, J. ^{[2
]}

Dang, Le Si ^{[3
]}

Gilet, P. ^{[1
]}

机构：

[1] CEA, LETI, F-39054 Grenoble 09, France

[2] UJF Grenoble 1, UMR E, SP2M, Equipe Mixte,CEA,CNRS,UJF Nanophys & Semicond,INA, F-38054 Grenoble 9, France

[3] Univ Grenoble 1, CNRS, Inst Neel, Equipe Mixte,CEA,CNRS Nanophys & Semicond, F-38042 Grenoble 9, France

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 13期

关键词：

D O I：

10.1049/el.2011.1242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is presented on the fabrication of light emitting diodes (LEDs) based on GaN core/shell wires on conductive substrates by metal organic vapour phase epitaxy. Catalyst-free GaN-based wires are grown spontaneously on 2-inch n-doped silicon substrates without any thick buffer layer. The LED wire heterostructure consists of an n-type GaN: Si core covered radially by five InGaN/GaN quantum wells and a p-type GaN:Mg shell. Macroscopic devices that integrate around 10(6) wire-LEDs have been obtained thanks to a simple, direct and full-wafer scale contacting process. For the first time, continuous-wave electrical injection at room temperature through the Si substrate into a cm(2)-chip of GaN-based core/shell wire-LEDs is successfully demonstrated, producing blue electroluminescent emission at 450 nm.

引用

页码：765 / 766

页数：2

共 9 条

[1] Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells [J].