Gold-Free GaAs Nanowire Synthesis and Optical Properties

被引:44
作者
Fontcuberta i Morral, A. [1 ,2 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Mat, CH-1015 Lausanne, Switzerland
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
基金
欧洲研究理事会; 瑞士国家科学基金会;
关键词
Catalyst free; gold free; growth mechanisms; molecular beam epitaxy (MBE); nanowires; MOLECULAR-BEAM EPITAXY; OXIDE-ASSISTED GROWTH; SEMICONDUCTOR NANOWIRES; SILICON NANOWIRES; CORE-SHELL; MECHANISM; HETEROSTRUCTURES; INP; FABRICATION; INDIUM;
D O I
10.1109/JSTQE.2010.2091259
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without the use of gold as a catalyst is reviewed. The review focuses on gallium-assisted growth and selective area epitaxy, revealing the common and different growth mechanisms and resulting properties. In particular, we show how the excellent material quality results also in excellent optical properties of gold-free GaAs nanowires and related heterostructures. Finally, the perspectives for future applications are discussed.
引用
收藏
页码:819 / 828
页数:10
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