Electrooptic effects in GaAs-AlGaAs narrow coupled quantum wells

被引：6
作者：
Earnshaw, MP
Allsopp, DWE
机构：
[1] Univ York, Dept Elect, York YO1 5DD, N Yorkshire, England
[2] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
electroabsorption; electrooptic effects; optical phase modulation; quantum wells;
D O I：
10.1109/3.929589
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linear and quadratic electrooptic coefficients in narrow single and strongly coupled GaAs-AlxGa1-xAs quantum wells have been measured, The quadratic electrooptic effect is enhanced over that of conventional square quantum wells for both TE and TM polarization in all the structures considered, by up to six times in the case of 2-nm-wide GaAs-Al0.2Ga0.8 As strongly coupled quantum wells. The origin of the enhanced quadratic electrooptic effect was found to correlate with a larger red shift in the absorption edge exciton and strong Coulombic coupling of the bound exciton states with the quasi-continua.
引用
收藏
页码：897 / 904
页数：8
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