Effects of magnetic fields in the plasma chamber on hot-carrier response of CMOS devices

被引：1

作者：

Oner, M ^{[1
]}

Janapaty, V ^{[1
]}

Bui, N ^{[1
]}

Bhuva, B ^{[1
]}

Kerns, S ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1998年

关键词：

D O I：

10.1109/PPID.1998.725586

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

During plasma etching, the presence of magnetic fields in the plasma chamber will induce voltages in the metal interconnects. This induced voltages will be superimposed on top of the charging voltages generated due to plasma charging. This paper describes our efforts to characterize the effects of this magnetic-field-induced voltages on hot-carrier response of CMOS devices.

引用

页码：108 / 111

页数：4