Origin of the nitrogen-induced optical transitions in GaAs1-xNx -: art. no. 075207

被引:24
|
作者
Francoeur, S [1 ]
Seong, MJ
Hanna, MC
Geisz, JF
Mascarenhas, A
Xin, HP
Tu, CW
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Univ Calif San Diego, La Jolla, CA 92093 USA
关键词
D O I
10.1103/PhysRevB.68.075207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature and concentration dependence of optical transitions in GaAs1-xNx (<3.8 eV) are studied by electromodulated reflectance. These studies suggest that the E+ transition involves the valence-band maximum at Gamma and a singlet state originating from the splitting of the quadruply degenerate conduction band at L. Such a transition, forbidden in pure GaAs, becomes allowed in GaAs1-xNx due to the strong perturbation of nitrogen doping to the band structure. A similar analysis applied to the transition E-* suggests that it is related either to resonant states evolving from the level created by a single isolated nitrogen impurity in GaAs, or to the splitting of the triplet originating from the L conduction band, induced by a further reduction in symmetry associated with nitrogen pairs.
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页数:5
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