A Ka-Band Low-Loss SPDT Switch with Gate Floating Technique

被引：0
|
作者：
Li, Ling [1 ]
Zhang, Hao [2 ]
Wang, Keping [1 ,3 ]
机构：
[1] Southeast Univ, EAST Lab, Nanjing, Peoples R China
[2] Nanjing Res Inst Elect Technol, Nanjing, Peoples R China
[3] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
来源：
2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年
关键词：
D O I：
10.1109/ucmmt49983.2020.9295999
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a low loss single-pole double-throw switch (SPDT) is presented for Ka-band (32-38 GHz) application. The switch is based on the shunt transistor with an impedance matching network. The gate floating method is used to enhance the power handling capability. Meanwhile, the transistor size is optimized by the tradeoff between the insertion loss and isolation. The measurement results of the proposed SPDT switch show that the insertion loss is less than 2.5 dB, and the isolation is greater than 19 dB across 32-38 GHz. The overall chip size is 0.5 mm(2), including RF and DC pads.
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页数：3
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