Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography

被引：5

作者：

Uenuma, Mutsunori ^{[1
]}

Kuwaharada, Shingo ^{[1
]}

Tomita, Hiroto ^{[1
]}

Tanaka, Masaki ^{[1
]}

Sun, Zexu ^{[1
]}

Hashimoto, Yusuke ^{[1
]}

Fujii, Mami N. ^{[2
]}

Matsushita, Tomohiro ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan

[2] Kindai Univ, Fac Sci & Engn, 3-4-1 Kowakae, Higashiosaka, Osaka 5778502, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 08期

关键词：

GaN; gallium oxide; photoelectron holography;

D O I：

10.35848/1882-0786/ac7dd9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic structure of gallium oxide at the Al2O3/GaN interface was investigated using photoelectron holography. An amorphous Al2O3 layer was formed on a homoepitaxially grown n-type GaN surface by atomic layer deposition at 300 degrees C. The photoelectron holograms were measured by a display-type retarding field analyzer. From the forward-focusing peaks in the photoelectron hologram of Ga 3d, we confirmed that a layer of gallium oxide ordered structure is found at the Al2O3/GaN interface, and the Ga-O-Ga lattice constant on the c-axis was 1.2 times longer than the Ga-N-Ga distance of the GaN crystal structure. (C) 2022 The Japan Society of Applied Physics

引用

页数：4

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