Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography

被引：5

作者：

Uenuma, Mutsunori ^{[1
]}

Kuwaharada, Shingo ^{[1
]}

Tomita, Hiroto ^{[1
]}

Tanaka, Masaki ^{[1
]}

Sun, Zexu ^{[1
]}

Hashimoto, Yusuke ^{[1
]}

Fujii, Mami N. ^{[2
]}

Matsushita, Tomohiro ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan

[2] Kindai Univ, Fac Sci & Engn, 3-4-1 Kowakae, Higashiosaka, Osaka 5778502, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 08期

关键词：

GaN; gallium oxide; photoelectron holography;

D O I：

10.35848/1882-0786/ac7dd9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic structure of gallium oxide at the Al2O3/GaN interface was investigated using photoelectron holography. An amorphous Al2O3 layer was formed on a homoepitaxially grown n-type GaN surface by atomic layer deposition at 300 degrees C. The photoelectron holograms were measured by a display-type retarding field analyzer. From the forward-focusing peaks in the photoelectron hologram of Ga 3d, we confirmed that a layer of gallium oxide ordered structure is found at the Al2O3/GaN interface, and the Ga-O-Ga lattice constant on the c-axis was 1.2 times longer than the Ga-N-Ga distance of the GaN crystal structure. (C) 2022 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Interface formation of Al2O3 on n-GaN(0001): Photoelectron spectroscopy studies
Lewandkow, Rafal
Grodzicki, Milosz
Mazur, Piotr
Ciszewski, Antoni
SURFACE AND INTERFACE ANALYSIS, 2021, 53 (01) : 118 - 124
[2] A Study of the Effect of Surface Pretreatment on Atomic Layer Deposited Al2O3 Interface with GaN
Gao, Jianyi
Li, Wenwen
Mandal, Saptarshi
Chowdhury, Srabanti
WIDE BANDGAP POWER DEVICES AND APPLICATIONS II, 2017, 10381
[3] Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
Jia, Ye
Wallace, Joshua S.
Echeverria, Elena
Gardella, Joseph A., Jr.
Singisetti, Uttam
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (08):
[4] Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition
Teramoto, Akinobu
Saito, Masaya
Suwa, Tomoyuki
Narita, Tetsuo
Kuroda, Rihito
Sugawa, Shigetoshi
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (09) : 1309 - 1312
[5] Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures
Spelta, Tarek
Martinez, Eugenie
Veillerot, Marc
Rocha, Pedro Fernandes Paes Pinto
Vauche, Laura
Salem, Bassem
Hyot, Berangere
SURFACE AND INTERFACE ANALYSIS, 2024, 56 (07) : 399 - 407
[6] Investigation of the GaN/Al2O3 Interface by First Principles Calculations
Chokawa, Kenta
Kojima, Eiji
Araidai, Masaaki
Shiraishi, Kenji
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (04):
[7] Effects of Cl passivation on Al2O3/GaN interface properties
Nagai, Taisei
Taoka, Noriyuki
Ohta, Akio
Makihara, Katsunori
Miyazaki, Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SA)
[8] Study of moire fringes at the interface of GaN/α-Al2O3(0001)
Chen, ZZ
Shen, B
Qin, ZX
Zhu, JM
Zhang, R
Zheng, YD
Zhang, GY
PHYSICA B-CONDENSED MATTER, 2002, 324 (1-4) : 59 - 62
[9] Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study
Zhang, Zhaofu
Guo, Yuzheng
Robertson, John
MICROELECTRONIC ENGINEERING, 2019, 216
[10] Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure
Bito, Keigo
Ishiguro, Masaki
Radzuan, Hadirah A.
Hiroshige, Hikaru
Motoyama, Tomohiro
Nakamura, Yusui
Asubar, Joel T.
Yatabe, Zenji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (08)

← 1 2 3 4 5 →