Design of a low-power 3.5-GHz broad-band CMOS transimpedance amplifier for optical transceivers

被引:34
作者
Hasan, SMR [1 ]
机构
[1] Massey Univ, VLSI Microsyst Res Grp, Inst Informat & Math Sci, Auckland 1311, New Zealand
关键词
broad band; inductive peaking; optical transceiver; transimpedance; voltage-current feedback;
D O I
10.1109/TCSI.2005.849101
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a novel low-power low-noise CMOS voltage-current feedback transimpedance amplifier design using a low-cost Agilent 0.5-mu m 3M1P CMOS process technology. Theoretical foundations for this transimpedance amplifier by way of gain, bandwidth and noise analysis are developed. The bandwidth of the amplifier was extended using the inductive peaking technique, and, simulation results indicated a -3-dB bandwidth of 3.5 GHz with a transimpedance gain of approximate to 60 dB ohms. The dynamic range of the amplifier was wide enough to enable an output peak-to-peak voltage swing of around 400 mV for a test input current swing of 100 mu A - The output noise voltage spectral density was 12 nV/root Hz (with a peak of approximate to 25 nV/root Hz), gut while the input-referred noise current spectral density was below 20 pA/root Hz within the amplifier frequency band. The amplifier consumes only around 5 mA from a 3.3-V power supply. A test chip implementing the transimpedance amplifier was also fabricated using the low-cost CMOS process.
引用
收藏
页码:1061 / 1072
页数:12
相关论文
共 22 条
[1]   GIGAHERTZ TRANSRESISTANCE AMPLIFIERS IN FINE LINE NMOS [J].
ABIDI, AA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (06) :986-994
[2]   Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs [J].
Bruccoleri, F ;
Klumperink, EAM ;
Nauta, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (07) :1032-1040
[3]   LOW-NOISE, LOW-DISTORTION CMOS AM WIDE-BAND AMPLIFIERS MATCHING A CAPACITIVE SOURCE [J].
CHANG, ZY ;
SANSEN, WMC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (03) :833-840
[4]  
Haralabidis N, 2000, ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V, P421, DOI 10.1109/ISCAS.2000.857461
[5]  
Johns D.A., 2008, Analog integrated circuit design
[6]   Wideband CMOS transimpedance amplifier [J].
Kossel, M ;
Menolfi, C ;
Morf, T ;
Schmatz, M ;
Toifl, T .
ELECTRONICS LETTERS, 2003, 39 (07) :587-588
[7]   2 Gbit/s transimpedance amplifier fabricated by 0.35 μm CMOS technologies [J].
Kuo, CW ;
Hsiao, CC ;
Yang, SC ;
Chan, YJ .
ELECTRONICS LETTERS, 2001, 37 (19) :1158-1160
[8]   Design of high-speed, high-performance, serial bus data transceiver [J].
Kuppusamy, SK ;
Hasan, SMR .
DESIGN, MODELING AND SIMULATION IN MICROELECTRONICS, 2000, 4228 :342-351
[9]  
LEE TH, 2001, DESIGN CMOS RADIO FR
[10]   The modeling, characterization, and design of monolithic inductors for silicon RF IC's [J].
Long, JR ;
Copeland, MA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (03) :357-369