High-Isolation and Low-Loss RF MEMS Shunt Switches

被引：0
|
作者：
Jaafar, Haslina [1 ,2 ]
Sidek, Othman [2 ]
Miskam, Azman [2 ]
Abdul-Rahman, Razi [2 ,3 ]
机构：
[1] Univ Putra Malaysia, Dept Elect & Elect Engn, Fac Engn, Serdang 43400, Selangor, Malaysia
[2] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr, Nibong Tebal 14300, Pulau Pinang, Malaysia
[3] Univ Sains Malaysia, Sch Mech Engn, Nibong Tebal 14300, Pulau Pinang, Malaysia
来源：
APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL | 2010年 / 25卷 / 09期
关键词：
Insertion loss; isolation; low voltage; MEMS; method-of-moment; RF MEMS; shunt switch;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively.
引用
收藏
页码：780 / 786
页数：7
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