High-Isolation and Low-Loss RF MEMS Shunt Switches

被引：0

作者：

Jaafar, Haslina ^{[1
,2
]}

Sidek, Othman ^{[2
]}

Miskam, Azman ^{[2
]}

Abdul-Rahman, Razi ^{[2
,3
]}

机构：

[1] Univ Putra Malaysia, Dept Elect & Elect Engn, Fac Engn, Serdang 43400, Selangor, Malaysia

[2] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr, Nibong Tebal 14300, Pulau Pinang, Malaysia

[3] Univ Sains Malaysia, Sch Mech Engn, Nibong Tebal 14300, Pulau Pinang, Malaysia

来源：

APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL | 2010年 / 25卷 / 09期

关键词：

Insertion loss; isolation; low voltage; MEMS; method-of-moment; RF MEMS; shunt switch;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively.

引用

页码：780 / 786

页数：7

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