Free-standing boron doped CVD diamond films grown on partially stabilized zirconia substrates

被引：4

作者：

Vasconcellos de Siqueira Brandao, Livia Elisabeth ^{[2
]}

Pires, Rafael Fernando ^{[1
]}

Balzaretti, Naira Maria ^{[1
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, PGCIMAT, BR-91501970 Porto Alegre, RS, Brazil

来源：

VIBRATIONAL SPECTROSCOPY | 2010年 / 54卷 / 02期

关键词：

Diamond film; p-Type doping chemical vapor deposition; Raman spectroscopy; THIN-FILMS; POLYCRYSTALLINE DIAMOND; RAMAN-SPECTROSCOPY; SUPERCONDUCTING DIAMOND; CARBON; ELECTRODES; ORIGIN; SCATTERING; GRAPHITE; SPECTRA;

D O I：

10.1016/j.vibspec.2010.03.003

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Boron doped diamond films have been grown adhered to silicon substrates by chemical vapor deposition using boron containing gases. In this work it was shown that it is possible to grow free-standing boron doped CVD diamond films on partially stabilized zirconia substrates using boron powder as the source for doping. Results from Raman spectroscopy confirmed the boron incorporation with concentration up to similar to 10(20) cm(-3). X-ray diffraction and scanning electron microscopy showed that the effect of boron incorporation in the microstructure of the diamond film is negligible. The measurement of the resistivity as a function of temperature confirmed the semiconductor behavior, as expected for p-type diamond. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：84 / 88

页数：5

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