Wavelength-selective integrated optical MEMS filter in INP

被引：10

作者：

Datta, M ^{[1
]}

Pruessner, MW ^{[1
]}

Amarnath, K ^{[1
]}

McGee, J ^{[1
]}

Kanakaraju, S ^{[1
]}

Ghodssi, R ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, Syst Res Inst, MEMS Sensors & Actuators Lab MSAL, College Pk, MD 20742 USA

来源：

MEMS 2005 MIAMI: TECHNICAL DIGEST | 2005年

关键词：

D O I：

10.1109/MEMSYS.2005.1453874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-power, electrostatically-actuated integrated optical filter on an InP MEMS platform. The micromachined filter achieves a resonant wavelength shift of 12nm (1513-1525nm) at a low operating voltage (7V). The filter consists of a half-wavelength long resonant cavity bound by two highly reflective Distributed Bragg Reflector (DBR) mirrors fabricated by lithography and dry-etching. The filter is integrated monolithically with a doubly-clamped suspended-beam capacitive microactuator and optical waveguides. This paper discusses the fabrication as well as experimental results, showing good agreement between the measured and simulated performance of the filter. The novelty of the device lies in its in-plane MEMS actuation scheme enabling easy integration with other waveguide-based planar integrated optical active and passive components on an InP optoelectronic chip.

引用

页码：88 / 91

页数：4

共 7 条

[1] Wavelength tunable hybrid laser diode realized by using an electrostatically tuned silicon micromachined Fabry-Perot interferometer [J].