The temperature dependence of atomic incorporation characteristics in growing GaInNAs films

被引：4

作者：

Li, Jingling ^{[1
]}

Zhang, Shuguang ^{[1
,2
]}

Gao, Fangliang ^{[1
]}

Wen, Lei ^{[1
]}

Zhou, Shizhong ^{[1
]}

Li, Guoqiang ^{[1
,2
]}

机构：

[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

[2] S China Univ Technol, Sch Mat Sci & Engn, Dept Elect Mat, Guangzhou 510641, Guangdong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 05期

基金：

中国国家自然科学基金;

关键词：

MOLECULAR-BEAM EPITAXY; SOLAR-CELLS; N INCORPORATION; GAINASN; NITROGEN; RAMAN; SPECTROSCOPY; INGAASN; FUTURE; GROWTH;

D O I：

10.1063/1.4907569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have systematically studied the temperature dependence of incorporation characteristics of nitrogen (N) and indium (In) in growing GaInNAs films. With the implementation of Monte-Carlo simulation, the low N adsorption energy (-0.10 eV) is demonstrated. To understand the atomic incorporation mechanism, temperature dependence of interactions between Group-III and V elements are subsequently discussed. We find that the In incorporation behaviors rather than that of N are more sensitive to the T-g, which can be experimentally verified by exploring the compositional modulation and structural changes of the GaInNAs films by means of high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope, and secondary ion mass spectroscopy. (C) 2015 AIP Publishing LLC.

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页数：6

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