Growth and characterization of SiC layers obtained by microwave-CVD

被引：18

作者：

Mandracci, P

Ferrero, S

Cicero, G

Giorgis, F

Pirri, CF

Barucca, G

Reitano, R

Musumeci, P

Calcagno, L

Foti, G

机构：

[1] INFM, I-10129 Turin, Italy

[2] Politecn Torino, Dept Elect, I-10129 Turin, Italy

[3] Politecn Torino, Dept Phys, I-10129 Turin, Italy

[4] Univ Ancona, Dept Mat Sci, I-60131 Ancona, Italy

[5] INFM, I-60131 Ancona, Italy

[6] INFM, Catania, Italy

[7] Catania Univ, Dept Phys, Catania, Italy

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

polycrystalline silicon carbide; ECR-CVD; X-ray diffraction; Raman spectroscopy;

D O I：

10.1016/S0040-6090(00)01598-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide is a wide band gap semiconductor of interest for its application in many electronic devices. In recent years, a large research activity has been devoted to growth techniques for amorphous, polycrystalline or even epitaxial structures. In this paper, we have reported results on microcrystalline and polycrystalline SiC layers grown by high temperature ECR-CVD over 4" (100) silicon wafer in SiH(4) + CH(4) gas mixtures. The structure of the films has been investigated by X-ray diffractometry, micro-Raman spectroscopy and transmission electron microscopy (TEM). Stoichiometric SiC films containing a complete chemical order, 3C-SiC crystals with orientation close to that of Si substrate and lateral dimensions larger than 100 nm have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 171

页数：3

共 7 条

[1] Deposition of polycrystalline beta-SiC films on Si substrates at room temperature [J].