Mid-IR vertical cavity surface-emitting lasers

被引：0
|
作者：
Bewley, WW [1 ]
Felix, CL [1 ]
Aifer, EH [1 ]
Meyer, JR [1 ]
Goldberg, L [1 ]
Vurgaftman, I [1 ]
Chow, DH [1 ]
Selvig, E [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
INFRARED APPLICATIONS OF SEMICONDUCTORS II | 1998年 / 484卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a "W" configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 mu m has a weak temperature variation (d lambda/dT approximate to 0.07 -0.09 nm/K), and the multimode linewidth is quite narrow (2.5-4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 ii, the threshold pump power is as low as 4 mW for a 6 mu m spot, and the differential power conversion efficiency is 4.5%.
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页码：95 / 100
页数：6
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