Electronic structure and interband optical properties of β-FeSi2

被引：22

作者：

Lange, H ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Abt Photovoltaik, D-12489 Berlin, Germany

来源：

THIN SOLID FILMS | 2001年 / 381卷 / 02期

关键词：

beta-FeSi2; energy gap; epitaxial layers;

D O I：

10.1016/S0040-6090(00)01739-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Theoretical and experimental results on the gap nature of beta -FeSi2 are summarized. The energy gap nature and gap value of beta -FeSi2 are sensitively subject to lattice parameter variations. For the first time excitonic structures are observed on epitaxial layers. Real and imaginary parts of the dielectric function of beta -FeSi2 are well reproduced by theory up to 5 eV. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：171 / 175

页数：5

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