Body-Effect-Free OLED-on-Silicon Pixel Circuit Based on Capacitive Division to Extend Data Voltage Range

被引:2
作者
Bae, Jina [1 ]
Nam, Hyoungsik [1 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
关键词
OLEDoS; pixel compensation; threshold voltage variation; data voltage range; body effect; HIGH-RESOLUTION;
D O I
10.3390/electronics10192351
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper proposes an OLED pixel compensation circuit that copes with threshold voltage variation, narrow data voltage range, and body effect on a backplane of silicon-based transistors. It consists of six PMOS transistors and two capacitors. The data voltage range is extended by the capacitor division with two capacitors, and the connection of both source and gate nodes to the supply voltage makes the driving transistor free from the body effect. In addition, the reference voltage is used to initialize the gate node voltage of the driving transistor as well as to adjust the data voltage region. By the SPICE simulation, it is verified that the current error over the threshold voltage variations of +/- 10 mV is reduced to be -1.200% to 0.964% at the maximum current range of around 8 nA, and the data voltage range is extended to 3.4 V, compared to the large current error range from -21.46% to 27.36% and the data voltage range of 0.41 V in the basic 2T1C circuit. In addition, the body-effect-free circuit outperforms the latest 4T1C circuit of the current error range from -3.279% to 3.388%.
引用
收藏
页数:9
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