Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots

被引：8
作者：
Kim, GH
Ritchie, DA
Liang, CT
Lian, GD
Yuan, J
Pepper, M
Brown, LM
机构：
[1] ETRI, Telecommun Basic Res Lab, Taejon 305600, South Korea
[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 24期
关键词：
D O I：
10.1063/1.1378801
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility fur the orthogonal [(1) over bar 10] and [110] directions. The mobility in the [(1) over bar 10] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility. (C) 2001 American Institute of Physics.
引用
收藏
页码：3896 / 3898
页数：3
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