Polar discontinuity doping of the LaVO3/SrTiO3 interface

被引：213
作者：
Hotta, Y.
Susaki, T.
Hwang, H. Y. [1 ]
机构：
[1] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778651, Japan
[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.99.236805
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the transport properties of LaVO3/SrTiO3 Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO2/LaO/TiO2 polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO2/SrO/TiO2 interface, formed by inserting a single layer of bulk metallic SrVO3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.
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