Use of lossless transmission-line segments and shunt resistors for TLM diffusion modelling

被引:3
作者
Gui, XA [1 ]
机构
[1] Energy Explorat Technol, Calgary, AB T2P 3G2, Canada
关键词
transmission-line matrix (TLM) method; diffusion; absorption; SEMICONDUCTOR-DEVICES;
D O I
10.1002/jnm.512
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In diffusion modelling by means of the transmission-line matrix (TLM) method, a nodal arrangement of using lossless transmission-line segments and series resistors is almost exclusively adopted and is currently considered as a standard approach. In this paper, the use of shunt resistors instead of series resistors is shown to represent an equally valid configuration. As a starting point, we have derived the telegrapher's equation in its most general form for TLM modelling of diffusion processes. A general algorithm based on the shunt-resistor TLM model for implementing a numerical solution of the diffusion equation in multiple dimensions is given. Fundamental analysis and calculated examples confirm that the alternative shunt-resistor configuration does not exhibit the unwanted absorption effects suggested by a recent paper (Internat. J. Numerical Model.: Electronic Networks, Devices and Fields 2002; 15:261). Copyright (C) 2003 John Wiley Sons, Ltd.
引用
收藏
页码:465 / 478
页数:14
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