Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

被引：79

作者：

Boero, G ^{[1
]}

Utke, I ^{[1
]}

Bret, T ^{[1
]}

Quack, N ^{[1
]}

Todorova, M ^{[1
]}

Mouaziz, S ^{[1
]}

Kejik, P ^{[1
]}

Brugger, J ^{[1
]}

Popovic, RS ^{[1
]}

Hoffmann, P ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.1856134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hall devices having an active area of about (500 nm)(2) are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 muT/Hz(1/2) at frequencies above 1 kHz. (C) 2005 American Institute of Physics.

引用

页码：042503 / 1

页数：3

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