On the existence of two different resistive switching mechanisms in metal organic charge transfer complex thin films

被引：0

作者：

Kever, Thorsten ^{[1
]}

Klopstra, Bart ^{[1
]}

Boettger, Ulrich ^{[1
]}

Waser, Rainer ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52074 Aachen, Germany

来源：

7TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM | 2006年

关键词：

non-volatile memory; amorphous material; charge transfer complex; resistive switching mechanisms; metal-organic thin film;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this study we will describe the switching effect in the metal-organic charge transfer complex system Cu:7,7,8,8-Tetracyanoquinodimethane (TCNQ). The samples were prepared by physical vapor deposition (PVD). This process results in the formation of amorphous Cu:TCNQ thin films with a ratio of 1:1 of the metal and the organic compound. Simple capacitor like test structures were prepared with Cu:TCNQ thin films as an active layer. These devices showed reproducible resistive switching. The origin of the bistable switching in Cu:TCNQ thin films is discussed. In this study, we show the existence of two distinctive reversible resistive switching effects in Cu:TCNQ thin films. Three different states could be observed, a high resistance state (R-OFF in the 10(7) Omega range), a low resistance state (R-ON in the 10(4) Omega range) and a very low resistance state with metallic like behavior (R-MET in the 10(1) Omega range). The switching to the very low resistance state requires a higher switching voltage and is much less stable than switching to the low resistance state. Therefore, the main focus is on the latter effect which has more potential for possible future applications.

引用

页码：113 / 116

页数：4