150°C amorphous silicon thin-film transistor technology for polyimide substrates

被引：67

作者：

Gleskova, H ^{[1
]}

Wagner, S

Gasparík, V

Kovác, P

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Comenius Univ, Dept Solid State Phys, Fac Math & Phys, Bratislava, Slovakia

[3] Slovak Univ Technol Bratislava, Dept Nucl Phys & Technol, Fac Elect Engn & Informat Technol, Bratislava, Slovakia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 07期

关键词：

D O I：

10.1149/1.1373661

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have developed a 150 degreesC technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with hack-channel etch and channel-passivated structures were fabricated on glass or 51 mum thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of similar to 10(7) and an electron mobility of similar to0.7 cm(2)/V s. (C) 2001 The Electrochemical Society.

引用

页码：G370 / G374

页数：5

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