Stochastic models of carrier dynamics in single-walled carbon nanotubes

被引：29
作者：
Barzykin, AV [1 ]
Tachiya, M [1 ]
机构：
[1] AIST, Tsukuba, Ibaraki 3058565, Japan
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.72.075425
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent time-resolved measurements in optically excited individual semiconducting single-walled carbon nanotubes have revealed rapid electron-hole pair annihilation. A stochastic model of the carrier dynamics has been proposed that includes Auger interactions and discrete occupancy of the nanotubes by the carriers [F. Wang , Phys. Rev. B 70, 241403(R) (2004)]. Here we solve this model analytically and also analyze another physically reasonable stochastic model which involves Auger ionization.
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