The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits

被引：35
|
作者：
Pease, Ronald L. [1 ]
Platteter, Dale G. [2 ]
Dunham, Gary W. [2 ]
Seiler, John E. [2 ]
Adell, Philippe C. [3 ]
Barnaby, Hugh J. [4 ]
Chen, Jie [4 ]
机构：
[1] RLP Res, Los Lunas, NM 87031 USA
[2] NAVSEA Crane, Crane, IN 47522 USA
[3] Jet Propuls Lab, Pasadena, CA 91109 USA
[4] Arizona State Univ, Tempe, AZ 85287 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期
关键词：
dose rate; enhanced low-dose-rate sensitivity; hydrogen; interface traps; radiation effects; temperature transducer; total ionizing dose; voltage comparator;
D O I：
10.1109/TNS.2007.907870
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.
引用
收藏
页码：2168 / 2173
页数：6
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