Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?

被引:6
作者
Liu, Fude [1 ]
Collazo, Ramon [1 ]
Mita, Seiji [1 ]
Sitar, Zlatko [1 ]
Duscher, Gerd [1 ,2 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
关键词
D O I
10.1002/adma.200701288
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The exact 3D geometry of nanometer-scale AIN pits is determined by Z-contrast imaging. The figure shows the 3D geometry of an AIN nano-pit and its corresponding GaN quantum dot. An atomic-resolution Z-contrast image is displayed in false color to clearly show the Z-contrast of the image, while the other panel displays a schematic 3D view.
引用
收藏
页码:134 / +
页数:5
相关论文
共 26 条
[1]   V-shaped pits formed at the GaN/AlN interface [J].
Bai, J ;
Wang, T ;
Parbrook, PJ ;
Ross, IM ;
Cullis, AG .
JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :63-67
[2]   GaN quantum dot density control by rf-plasma molecular beam epitaxy [J].
Brown, J ;
Wu, F ;
Petroff, PM ;
Speck, JS .
APPLIED PHYSICS LETTERS, 2004, 84 (05) :690-692
[3]   Mechanism of GaN quantum dots capped with AlN:: An AFM, electron microscopy, and x-ray anomalous diffraction study [J].
Coraux, J. ;
Amstatt, B. ;
Budagoski, J. A. ;
Bellet-Amalric, E. ;
Rouviere, Jean-Luc ;
Favre-Nicolin, V. ;
Proietti, M. G. ;
Renevier, H. ;
Daudin, B. .
PHYSICAL REVIEW B, 2006, 74 (19)
[4]   GaN quantum dots by molecular beam epitaxy [J].
Daudin, B ;
Adelmann, C ;
Gogneau, N ;
Sarigiannidou, E ;
Monroy, E ;
Fossard, F ;
Rouvière, JL .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :540-545
[5]   The toughest transistor yet [J].
Eastman, LF ;
Mishra, UK .
IEEE SPECTRUM, 2002, 39 (05) :28-+
[6]  
Egerton R. F., 2005, PHYS PRINCIPLES ELEC, DOI DOI 10.1016/S1369-7021(05)71290-6
[7]  
Fälth FJ, 2002, PHYS SCRIPTA, VT101, P78
[8]   Growth of GaN quantum dots on nonpolar A-plane SiC by molecular-beam epitaxy [J].
Founta, S. ;
Rol, F. ;
Bellet-Amalric, E. ;
Sarigiannidou, E. ;
Gayral, B. ;
Moisson, C. ;
Mariette, H. ;
Daudin, B. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (15) :3968-3971
[9]   Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition [J].
Hoshino, K ;
Kako, S ;
Arakawa, Y .
APPLIED PHYSICS LETTERS, 2004, 85 (07) :1262-1264
[10]   Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescence [J].
Hoshino, K ;
Kako, S ;
Arakawa, Y .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 240 (02) :322-325