Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon

被引：0

作者：

Pokotilo, Yu. M. ^{[1
]}

Petukh, A. N. ^{[1
]}

Dzichkovski, O. A. ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220050, BELARUS

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 07期

关键词：

81.05.Cy; 81.40.Wx; 61.72.Ss; 61.80.Fe;

D O I：

10.1134/S1063782608070208

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The method of C-V characteristics has been used to study the accumulation kinetics of double and shallow hydrogen-related donors in proton-implanted epitaxial silicon. It is shown that the kinetics corresponds to the first-order reactions. The activation energies Delta E (1) = 2.3 eV and Delta E (2) = 1.4 eV and the pre-exponential factors tau(01) = 9.1 x 10(-17) s and tau(02) = 4.2 x 10(-9) s were determined for both types of the donors, respectively. It was shown that the bistability of the electric properties of silicon is due to the double hydrogen-related donor.

引用

页码：873 / 875

页数：3

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