Demonstration of quantized conductance in deeply reactive ion etched In0.53Ga0.47As/InP electron waveguides with in-plane gates

被引：0

作者：

Wesstrom, JOJ ^{[1
]}

Hieke, K ^{[1
]}

Stalnacke, B ^{[1
]}

Palm, T ^{[1
]}

Stoltz, B ^{[1
]}

机构：

[1] ERICSSON COMPONENTS AB,OPTOELECT PROD,S-16481 KISTA,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Clear conductance quantization at T=4.2 K has been demonstrated in a 140 nm wide and 200 nm long trench-isolated In(0.53)G(0.47)As/InP electron waveguide with in-plane gates, using the surrounding two-dimensional electron gas as the gate. It was fabricated using metalorganic vapor phase epitaxy, electron beam lithography, and CH4/H-2 reactive ion etching. In a T=20 K measurement on a 60 nm wide and 100 nm long device, only the first conductance plateau of 2e(2)/h was reached. (C) 1997 American Institute of Physics.

引用

页码：1302 / 1304

页数：3

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