Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

被引：240
作者：
Zheng, Wei [1 ]
Huang, Feng [1 ]
Zheng, Ruisheng [2 ,3 ]
Wu, Honglei [2 ,3 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Shenzhen Univ, Key Lab Optoelect Devices & Syst, Minist Educ, Shenzhen 518060, Peoples R China
[3] Shenzhen Univ, Guangdong Prov Inst Optoelect, Shenzhen 518060, Peoples R China
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 26期
基金：
中国国家自然科学基金;
关键词：
QUANTUM-EFFICIENCY; METASTABILITY; FABRICATION; NANOBELTS; SENSORS;
D O I：
10.1002/adma.201500268
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.
引用
收藏
页码：3921 / +
页数：9
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