Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors

被引：46

作者：

Ang, Kah-Wee ^{[1
]}

Zhu, Shi-Yang ^{[1
]}

Wang, Jian ^{[1
,2
]}

Chua, Khai-Tze ^{[1
]}

Yu, Ming-Bin ^{[1
]}

Lo, Guo-Qiang ^{[1
]}

Kwong, Dim-Lee ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期

关键词：

germanium-on-silicon-on-insulator (Ge-on-SOI); metal-semiconductor-metal (MSM) photodetector; Schottky barrier; silicon-carbon (Si : C);

D O I：

10.1109/LED.2008.923540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the first demonstration of an evanescent coupled germanium-on-silicon-on-insulator (Ge-on-SOI) metal-semiconductor-metal (MSM) photodetector with a novel silicon-carbon (Si:C) Schottky barrier enhancement layer. Through the insertion of a Si:C barrier layer between the metal/Ge interface, the hole Schottky barrier height phi(bh) can effectively be enhanced to similar to 0.52 eV above the valence band edge. As a result, significant dark-current I-Dark suppression by more than four orders of magnitude was demonstrated, leading to an impressive I-Dark of similar to 11.5 nA for an applied bias V-A of 1.0 V. Optical measurements performed at a photon wavelength of 1550 rim revealed the achievement of good internal responsivity and quantum efficiency of similar to 530 mA/W and 42.4%, respectively, making such a high-performance Ge-on-SOI MSM photodetector a promising option for optical communication applications.

引用

页码：704 / 707

页数：4

共 17 条

[1] Performance enhancement in uniaxial strained silicon-on-lnsulator N-MOSFETs featuring silicon-carbon source/drain regions [J].