Preferred Orientation Control of Bi Deposits Using Experimental Strategies

被引:11
作者
Lien, Chien-Hung [1 ]
Hu, Chi-Chang [1 ]
Tsai, Yi-Da [1 ]
Wang, David Shan-Hill [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Chem Engn, Lab Electrochem & Adv Mat, Hsinchu 30013, Taiwan
关键词
BISMUTH THIN-FILMS; LARGE-AREA; ELECTRODEPOSITION; WIRES;
D O I
10.1149/2.103204jes
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Based on the experimental strategy of fractional factorial design (FFD) and path of the steepest descent/ascent (PSD/PSA), the preferred orientation ratio of Bi(110)/Bi(012) facets of Bi deposits electroplated under a direct-current (dc) mode could be precisely controlled and predicted. The intensity ratio of Bi(110)/Bi(012) facets (i.e., the preferred orientation ratio which is denoted as f) was employed as the response variable since this variable was found to be one of the key factors determining the sensitive ability of bismuth-film electrodes (BFEs) to Sn(II). In the FFD study, temperature of the plating bath was identified to be the key factor affecting the preferred orientation ratio of Bi deposits meanwhile f only weakly depended on pH, current density, and stirring rate. From the PSD/PSA study, a simple but reliable model for changing the preferred orientation ratio was constructed and the deposit plated at 28 degrees C and pH = 4.25 showed the highest f value. Moreover, BFEs with various f values could be easily prepared and controlled, meanwhile the morphologies of Bi deposits with different f values were also examined in this work. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.103204jes] All rights reserved.
引用
收藏
页码:D260 / D264
页数:5
相关论文
共 26 条
[1]  
[Anonymous], APPLY RESPONSE SURFA
[2]   LOCALIZATION AND ELECTRON-ELECTRON INTERACTION EFFECTS IN THIN BI WIRES AND FILMS [J].
BEUTLER, DE ;
GIORDANO, N .
PHYSICAL REVIEW B, 1988, 38 (01) :8-19
[3]  
Box G. E., 1978, Statistics for experimenters, V664
[4]  
Hu CC, 2006, J CHIN INST CHEM ENG, V37, P589
[5]   Large magnetoresistance in postannealed Bi thin films [J].
Cho, SL ;
Kim, Y ;
Freeman, AJ ;
Wong, GKL ;
Ketterson, JB ;
Olafsen, LJ ;
Vurgaftman, I ;
Meyer, JR ;
Hoffman, CA .
APPLIED PHYSICS LETTERS, 2001, 79 (22) :3651-3653
[6]   Bismuth-film electrodes: recent developments and potentialities for electroanalysis [J].
Economou, A .
TRAC-TRENDS IN ANALYTICAL CHEMISTRY, 2005, 24 (04) :334-340
[7]   Anomalous growth of whisker-like bismuth-tin extrusions from tin-enriched tin-Bi deposits [J].
Hu, Chi-Chang ;
Tsai, Yi-Da ;
Lin, Chi-Cheng ;
Lee, Gen-Lan ;
Chen, Sinn-Wen ;
Lee, Tai-Chou ;
Wen, Ten-Chin .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 472 (1-2) :121-126
[8]   Synthesis of bismuth with various morphologies by electrodeposition [J].
Jiang, S ;
Huang, YH ;
Luo, F ;
Du, N ;
Yan, CH .
INORGANIC CHEMISTRY COMMUNICATIONS, 2003, 6 (06) :781-785
[9]   Fabrication of large-area single crystal bismuth nanowire arrays [J].
Jin, CG ;
Jiang, GW ;
Liu, WF ;
Cai, WL ;
Yao, LZ ;
Yao, Z ;
Li, XG .
JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (07) :1743-1746
[10]   Structure and electrical transport properties of bismuth thin films prepared by RF magnetron sputtering [J].
Kim, DH ;
Lee, SH ;
Kim, JK ;
Lee, GH .
APPLIED SURFACE SCIENCE, 2006, 252 (10) :3525-3531