Electrical and optical properties of MeV As and P ion implanted and annealed Indium Phosphide

We have studied the influence of As+ and P+ implantation on optoelectronic properties of InP. Samples were implanted at a dose of 1 x 10(16) cm(-2) and subsequently treated with rapid thermal annealing for temperatures between 400 and 700 degreesC for 30 seconds. Hall effect measurements showed low mobility and high resistivity for the lowest temperature annealed samples. As the annealing temperature was increased, the InP samples exhibited high mobility (of the order of 3000 cm(2)V(-1)s(-1)) and low resistivity, for both species of implanted ion. X-ray diffraction measurements indicated a region of expansion for both As+ and P+ implantations. The strain was annealed out at a temperature of 600 degreesC. Time resolved femtosecond differential reflectivity on unimplanted as well as implanted samples revealed a marked transformation of the carrier dynamics, induced by the implantation and the following annealing steps.