A novel SCR ESD protection structure with low-loading and latchup immunity for high-speed I/O pad

被引：6
|
作者：
Lai, CS [1 ]
Liu, MH [1 ]
Su, S [1 ]
Lu, TC [1 ]
机构：
[1] MXIC, Silicon Lab, Special Device Modeling Dept, Hsinchu, Taiwan
来源：
2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS | 2003年
关键词：
D O I：
10.1109/VTSA.2003.1252557
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A novel SCR device "Latchup-free gate-couple LVTPSCR (LFGCPSCR)" has been proposed to act as an efficient ESD protection device with low loading effect. With the proper control circuit, the trigger voltage under normal operation can be high up to 14 V, providing excellent immunity to Latchup. Under ESD events, this novel SCR device could trigger fast and provide an effective discharging path for ESD.
引用
收藏
页码：80 / 83
页数：4
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