Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band

被引：28

作者：

Bagaev, V. S. ^{[1
]}

Krivobok, V. S. ^{[1
]}

Nikolaev, S. N. ^{[1
]}

Onishchenko, E. E. ^{[1
]}

Skorikov, M. L. ^{[1
]}

Novikov, A. V. ^{[2
]}

Lobanov, D. N. ^{[2
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JETP LETTERS | 2011年 / 94卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1134/S0021364011130042

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It has been demonstrated that the barrier in the conduction band represented by the SiGe layer in SiGe/Si quantum wells affects the work function and equilibrium density of the quasi-two-dimensional condensed phase formed in these structures. The existence of a new recombination channel with unconventional characteristics is uncovered in the structures with barrier heights close to the critical value for the formation of the electron-hole liquid.

引用

页码：63 / 67

页数：5

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