New Low-Loss Microwave Dielectric Material ZnTiNbTaO8

被引：113

作者：

Liao, Qingwei ^{[1
]}

Li, Lingxia ^{[1
]}

Ren, Xiang ^{[1
]}

Ding, Xiang ^{[1
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 10期

基金：

中国博士后科学基金;

关键词：

BOND-VALENCE;

D O I：

10.1111/j.1551-2916.2011.04815.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new low-loss, low-temperature sinterable microwave dielectric material ZnTiNbTaO8 was investigated for the first time. Single phase ZnTiNbTaO8 was obtained by the conventional solid-state route and sintered at 1120 degrees C-1200 degrees C for 6 h. Theoretical density, packing fraction, bond valence, and oxygen octahedron distortion were calculated. The excellent microwave dielectric properties of epsilon = 36.3, Qf = 67 000 GHz, tau(f) = -57.66 x 10(-6)/degrees C were obtained from the new ZnTiNbTaO8 materials sintered at 1140 degrees C for 6 h.

引用

页码：3237 / 3240

页数：4

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