Microwave Power Capabilities of InAlN/GaN HEMTs

被引：0
|
作者：
De Jaeger, J. C. [1 ]
Gaquiere, C. [1 ]
Douvry, Y. [1 ]
Defrance, N. [1 ]
Hoel, V. [1 ]
Alomari, M. [2 ]
Kohn, E. [2 ]
Delage, S. [3 ]
di Forte-Poisson, M. A. [3 ]
Sarazin, N.
Morvan, E.
Dussaigne, A. [4 ]
Carlin, J. F. [4 ]
Kusmik, J. [5 ]
Ostermaier, C. [5 ]
Pogany, D. [5 ]
机构：
[1] Univ Lille, Inst Elect Microelect & Nanotechnol IEMN UMR 8520, Villeneuve Dascq, France
[2] TUU, Inst Elect Devices & Circuits, Ulm, Germany
[3] Alcatel Thales III V lab, Marcoussis, France
[4] Ecole Polytech Fed Lausanne, Lab Adv Semicond Photon Elect, Lausanne, Switzerland
[5] TUW, Inst Solid State Elect, Vienna, Austria
来源：
18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010), VOL 1 AND VOL 2 | 2010年
关键词：
GaN; InAlN; HEMTs; microwave power; ALGAN/GAN HEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on microwave power results of InAlN/GaN HEMTs on silicon carbide substrate. It is shown a power density higher than 10W/mm up to 10GHz. Investigations based on diamond substrate or heat spreaders on top of the device to improve the thermal dissipation are also described.
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页数：4
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