PbS/IGZO hybrid structure photo-field-effect transistor with high performance

被引：0

作者：

Meng, Ying ^{[1
,2
,3
]}

Wang, Jiawei ^{[1
,2
]}

Ming, Anjie ^{[1
,2
]}

Wang, Yinghui ^{[1
,2
,3
]}

Shi, Xuewen ^{[1
,2
]}

Li, Molin ^{[4
]}

Wang, Weibing ^{[1
,2
]}

Li, Ling ^{[1
,2
]}

机构：

[1] Univ Chinese Acad Sci, Dept Microelect, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[3] Chinese Acad Sci, Kunshan Branch, Inst Microelect, Kunshan 215347, Jiangsu, Peoples R China

[4] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

来源：

MICRO & NANO LETTERS | 2018年 / 13卷 / 11期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

phototransistors; lead compounds; IV-VI semiconductors; zinc compounds; thin film transistors; semiconductor growth; gallium compounds; semiconductor thin films; indium compounds; field effect transistors; back-gate hybrid structure; lead sulphide thin film; physical vapour deposition; photosensitive layer; discontinuous PbS film; deposition rate; PbS powders; amorphous indium gallium zinc oxide; hybrid structure photo-field-effect transistor; ideal diode; visible spectrum; PbS-InGaZnO; THIN-FILM-TRANSISTORS; PBS;

D O I：

10.1049/mnl.2018.5249

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To optimise the performance of photo-field-effect transistor, a back-gate hybrid structure was developed. In this hybrid phototransistor, lead sulphide (PbS) thin film was prepared using physical vapour deposition as a photosensitive layer. Discontinuous and uniform PbS film was obtained by controlling the deposition rate and time of PbS powders. Amorphous indium gallium zinc oxide (IGZO) with high mobility was used as an active layer. In this work, The hybrid structure phototransistor shows an excellent performance: device mobility () reach 8.7 cm(2)V(-1)s(-1), and responsivity achieve 2.7 x 10(4) A/W in visible spectrum and 5.7 A/W in near-infrared spectrum, respectively. Furthermore, the transistor exhibits detectivity up to 2.79 x 10(13) cmHz(1/2)W(-1). The device also exhibits characteristics of the ideal diode: the saturation current of the diode is as small as 0.422 nA, and the responsivity of diode is approximate to 0.74 A/W. Simplified manufacturing processes effectively reduce the cost of fabricated device and provide better device stability.

引用

页码：1531 / 1536

页数：6

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