Magnetic-field measurements using an integrated resonant magnetic-field sensor

被引:56
作者
Kadar, Z
Bossche, A
Sarro, PM
Mollinger, JR
机构
[1] Delft Univ Technol, Elect Instrumentat Lab, NL-2600 GA Delft, Netherlands
[2] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2628 CD Delft, Netherlands
关键词
magnetic sensor; silicon resonator;
D O I
10.1016/S0924-4247(98)00143-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The present paper introduces a magnetic-field sensor based on a resonating single-crystal silicon structure. The excitation of the resonator is achieved by the Lorentz force generated by a sinusoidal current flowing through a rectangular coil deposited on the surface of the structure. The amplitude of the vibration, which is proportional to the magnetic field, is detected by sensing capacitors. Because of the high-quality factor of the resonator, a lower detection limit of 1 nT, or even smaller might be realised when the device is vacuum-packaged. This paper describes the working principle, the fabrication procedure as well as open- and closed-loop measurement results. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:225 / 232
页数:8
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