SEAM and EBIC Studies of Morphological and Electrical Defects in Polycrystalline Silicon Solar Cells

被引：6

作者：

Meng, L. ^{[1
]}

Nagalingam, D. ^{[1
]}

Bhatia, C. S. ^{[1
,2
]}

Street, A. G. ^{[3
,4
]}

Phang, J. C. H. ^{[1
,4
]}

机构：

[1] Natl Univ Singapore, CICFAR, Singapore 117548, Singapore

[2] Inst Mat Res & Engn, Singapore, Singapore

[3] Qualcomm CDMA Technol, San Diego, CA USA

[4] Inscope Labs Pte Ltd, Singapore, Singapore

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

基金：

新加坡国家研究基金会;

关键词：

morphological defects; electrical defects; solar cell; Scanning Electron Acoustic Microscopy; SEAM; Electron Beam Induced Current; EBIC; MICROSCOPY;

D O I：

10.1109/IRPS.2010.5488781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Morphological and electrical defects in solar cells are distinguished by combining Scanning Electron Acoustic Microscopy (SEAM) and Electron Beam Induced Current (EBIC) techniques. These techniques provide complementary information on grain boundaries and defects that affect solar cell performance in different ways.

引用

页码：503 / 507

页数：5

共 8 条

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