Effects of Bi Content on the Ferroelectric Properties of BiFeO3 Thin Films

被引：16

作者：

Do, Dalhyun ^{[1
]}

Kim, Jin Won ^{[1
]}

Kim, Sang Su ^{[1
]}

Kim, Won-Jeong ^{[1
]}

Lee, Myang Hwan ^{[2
]}

Song, Tae Kwon ^{[2
]}

机构：

[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea

[2] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 57卷 / 06期

关键词：

Multiferroic BiFeO3 thin film; Ferroelectric hysteresis loop; Pulsed laser deposition; ENHANCED POLARIZATION; MULTIFERROICS;

D O I：

10.3938/jkps.57.1875

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two polycrystalline BiFeO3 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using pulsed laser deposition from nominal composition Bi1.0FeO3 and Bi1.1FeO3 targets. X-ray diffraction results confirmed that different impurity phases were formed in the Bi1.0FeO3 and the Bi1.1FeO3 thin films. The preferred orientation of the Bi1.0FeO3 thin films is the < 110 > direction while that of the Bi1.1FeO3 thin films is the < 100 > direction. The values of the remnant polarization (2P(r)) of the Bi1.0FeO3 and the Bi1.1FeO3 film capacitors were 49 mu C/cm(2) at an applied electric field of 500 kV/cm and 40 mu C/cm(2) at 467 kV/cm. A similar leakage current property was observed in both films.

引用

页码：1875 / 1878

页数：4

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