Performance of InGaAs metal-semiconductor-metal photodetectors on Si

被引：14
|
作者：
Bartels, A
Peiner, E
Klockenbrink, R
Wehmann, HH
Schlachetzki, A
机构：
[1] Institut für Halbleitertechnik, Tech. Universität Braunschweig, D-38106 Braunschweig
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 05期
关键词：
D O I：
10.1109/68.491590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of In0.53Ga0.47As metal-semiconductor-metal photodetectors on Si substrates was investigated, The devices were fabricated by standard technology employing metalorganic vapor-phase epitaxy growth on unpatterned exactly [001]-oriented Si substrates and conventional photolithography. At a bias voltage of 5 V the devices exhibit low dark currents of 10(-6)-10(-7) A, a high responsivity of 0.26 A/W at 1.3 mu m, and a cutoff frequency of 1.5 GHz. A further improvement could be achieved by increasing the bias voltage.
引用
收藏
页码：670 / 672
页数：3
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