A photonic integrated circuit-based erbium-doped amplifier

被引:201
作者
Liu, Yang [1 ,2 ]
Qiu, Zheru [1 ,2 ]
Ji, Xinru [1 ,2 ]
Lukashchuk, Anton [1 ,2 ]
He, Jijun [1 ,2 ]
Riemensberger, Johann [1 ,2 ]
Hafermann, Martin [3 ]
Wang, Rui Ning [1 ,2 ]
Liu, Junqiu [1 ,2 ]
Ronning, Carsten [3 ]
Kippenberg, Tobias J. [1 ,2 ]
机构
[1] Swiss Fed Inst Technol Lausanne EPFL, Inst Phys, CH-1015 Lausanne, Switzerland
[2] Swiss Fed Inst Technol Lausanne EPFL, Ctr Quantum Sci & Engn, CH-1015 Lausanne, Switzerland
[3] Friedrich Schiller Univ Jena, Inst Solid State Phys, Max Wien Pl 1, D-07743 Jena, Germany
关键词
WAVE-GUIDE AMPLIFIERS; UP-CONVERSION; OPTICAL GAIN; NET GAIN; DB; FIBERS;
D O I
10.1126/science.abo2631
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Erbium-doped fiber amplifiers revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient optical amplification in photonic integrated circuits but their use remains impractical as a result of insufficient output power. We demonstrate a photonic integrated circuit-based erbium amplifier reaching 145 milliwatts of output power and more than 30 decibels of smallsignal gain-on par with commercial fiber amplifiers and surpassing state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We apply ion implantation to ultralow-loss silicon nitride (Si3N4) photonic integrated circuits, which are able to increase the soliton microcomb output power by 100 times, achieving power requirements for low-noise photonic microwave generation and wavelength-division multiplexing optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of various fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.
引用
收藏
页码:1309 / +
页数:30
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