A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector

被引：54

作者：

Debnath, Ratan ^{[1
]}

Xie, Ting ^{[1
,2
]}

Wen, Baomei ^{[1
,3
]}

Li, Wei ^{[4
,5
]}

Ha, Jong Y. ^{[1
,6
]}

Sullivan, Nichole F. ^{[3
]}

Nguyen, Nhan V. ^{[4
]}

Motayed, Abhishek ^{[1
,6
]}

机构：

[1] NIST, Mat Sci & Engn Lab, Mat Measurement Lab, Gaithersburg, MD 20899 USA

[2] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[3] N5 Sensors Inc, Rockville, MD 20852 USA

[4] NIST, Semicond & Dimens Metrol Div, Phys Measurement Lab, Gaithersburg, MD 20899 USA

[5] Peking Univ, Key Lab Phys & Chem Nano Devices, Beijing 100871, Peoples R China

[6] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA

来源：

RSC ADVANCES | 2015年 / 5卷 / 19期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SOLAR-CELLS; ULTRAVIOLET PHOTODETECTORS; OXIDE HETEROSTRUCTURES; OPTICAL-PROPERTIES; HIGH-PERFORMANCE; FABRICATION; TEMPERATURE; SEMICONDUCTORS; TRANSISTOR;

D O I：

10.1039/c4ra14567d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper presents a high efficiency heterojunction p-NiO/n-ZnO thin film ultraviolet (UV) photodetector (PD) fabricated on conductive glass substrates. The devices are fabricated by using a simple spin-coating layer-by-layer method from precursor solutions. Photodiodes show good photoresponse and quantum efficiency under UV illumination. With an applied reverse bias of 1 V, the devices show maximum responsivity and detectivity of 0.28 A W-1 and 6.3 x 10(11) Jones, respectively, as well as high gain with external quantum efficiency (EQE) of over 90%. By employing ultrathin Ti/Au as top UV transparent metal contacts, this architecture allows the PDs to be illuminated either through glass or metal side. Laser beam induced current is used to examine the local variation of EQE providing information on the photoresponse behavior within the device. Optical properties of NiO and ZnO deposits have also been explored.

引用

页码：14646 / 14652

页数：7

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