Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells

被引：855
作者：
Knez, Ivan [1 ]
Du, Rui-Rui [1 ]
Sullivan, Gerard [2 ]
机构：
[1] Rice Univ, Dept Phys & Astron, Houston, TX 77251 USA
[2] Teledyne Sci & Imaging, Thousand Oaks, CA 91630 USA
来源：
PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 13期
关键词：
HYBRIDIZATION;
D O I：
10.1103/PhysRevLett.107.136603
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.
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