Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device

被引：45

作者：

Kim, Insung ^{[1
]}

Siddik, Manzar ^{[1
]}

Shin, Jungho ^{[1
]}

Biju, Kuyyadi P. ^{[2
]}

Jung, Seungjae ^{[1
]}

Hwang, Hyunsang ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol GIST, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol GIST, Dept Nanobio Mat & Elect WCU, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期

关键词：

FILMS;

D O I：

10.1063/1.3617426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a graphene oxide (GO)/Pr0.7Ca0.3MnO3 (PCMO) based resistance random access memory (RRAM) device. Both active layers were prepared by a sol-gel spin-coating method at low temperature (<300 degrees C). The fabricated Pt/GO/PCMO/Pt RRAM device shows good switching performance with an on/off ratio of about 100 and a retention property of more than 10(4) at 85 degrees C and reliable endurance characteristics. Moreover, the observed bipolar switching phenomena could be explained by the movement of oxygen ions across the GO-PCMO interface. These results suggest that the GO/PCMO device is a good candidate for use in resistive memory applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617426]

引用

页数：3

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