Photoluminescence intermittency of InGaAs/GaAs quantum dots confined in a planar microcavity

被引：17

作者：

Wang, XY

Ma, WQ

Zhang, JY

Salamo, GJ

Xiao, M

Shih, CK ^{[1
]}

机构：

[1] Univ Texas, Dept Phys, Austin, TX 78712 USA

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 10期

关键词：

D O I：

10.1021/nl051026x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photoluminescence intermittency, or "blinking", was observed in semiconductor InGaAs/GaAs quantum dots (QDs) inside a planar microcavity. Most of the blinking ON were found around defect sites such as dislocation lines naturally formed in the GaAs barrier layers, and the carrier traps responsible for blinking had an excitation threshold of similar to 1.53 eV. The blinking properties of epitaxial QDs and colloidal nanocrystal QDs were also compared by performing laser intensity dependent measurements and statistics of the "on" and "off" time distributions.

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收藏

页码：1873 / 1877

页数：5

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