Electrical properties of Al2O3-doped ZnO varistors prepared by sol-gel process for device miniaturization

被引:40
作者
Cheng, Li-Hong [1 ]
Zheng, Liao-Ying [1 ]
Meng, Lei [1 ]
Li, Guo-Rong [1 ]
Gu, Yan [2 ]
Zhang, Fu-Ping [2 ]
Chu, Rui-Qing [3 ]
Xu, Zhi-Jun [3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[2] China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China
[3] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng 252000, Peoples R China
关键词
Sol-gel process; Grain boundaries; ZnO; Varistors; ZINC-OXIDE VARISTORS; MICROSTRUCTURE; BEHAVIOR; POWDERS;
D O I
10.1016/j.ceramint.2011.05.039
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Al2O3-doped ZnO varistors with high performance have been fabricated with nano composite powders, which were prepared by the sol-gel method. The xerogels, calcined powders and sintered material ceramics were fully characterized. The electrical properties and grain boundary characteristics were measured. The average grain size decreased from 4.4 mu m to 3.0 mu m and the breakdown voltage increased from 720 V/cm to 1160 V/cm as the amount of Al2O3 increased from 0.0 wt.% to 0.40 wt.%. 2 ms square-wave test indicates that the energy capability was better in a sol-gel derived ZnO varistor than a conventional sample and was enhanced by Al2O3 doping. Improved electrical properties of sol-gel derived ZnO varistors is attributed to the smaller grain size and more uniform distribution of additives. Al2O3-doped ZnO varistor obtained from sol-gel process is useful for device miniaturization. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:S457 / S461
页数:5
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