Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

被引:3
|
作者
Mikhailov, A., V [1 ,2 ]
Belykh, V. V. [1 ,3 ]
Yakovlev, D. R. [1 ,4 ]
Grigoryev, P. S. [1 ,2 ]
Reithmaier, J. P. [5 ]
Benyoucef, M. [5 ]
Bayer, M. [1 ,4 ]
机构
[1] Tech Univ Dortmund, Expt Phys 2, D-44221 Dortmund, Germany
[2] St Petersburg State Univ, Spin Opt Lab, St Petersburg 199034, Russia
[3] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[5] Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt INA, D-34132 Kassel, Germany
基金
俄罗斯基础研究基金会;
关键词
ROOM-TEMPERATURE; INAS ISLANDS; LASERS; GENERATION; OPERATION;
D O I
10.1103/PhysRevB.98.205306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In0.53Al0.24Ga0.23As/InP quantum dots with emission wavelengths around 1.5 mu m by using pump-probe Faraday rotation spectroscopy. Electron-spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a submicrosecond longitudinal electron-spin relaxation time T(1 )which depends unexpectedly strongly on temperature. At high temperatures the electron-spin relaxation time is limited by optical phonon scattering through spin-orbit interaction decreasing down to 0.1 ns at 260 K. We show that the hole spin relaxation is activated much more effectively by a temperature increase compared with the electrons.
引用
收藏
页数:7
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