Structural changes induced by low-energy electron irradiation in GaSb

被引：1

作者：

Nitta, Noriko ^{[1
,2
]}

Aizawa, Yohta ^{[1
]}

Hasegawa, Tokiya ^{[1
,3
]}

Yasuda, Hidehiro ^{[1
,4
]}

机构：

[1] Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Kochi Univ Technol, Inst Nanotechnol, Kochi 7828502, Japan

[3] Toppan Printing Co Ltd, Tokyo, Japan

[4] Osaka Univ, Res Ctr Ultra High Voltage Electron Microscopy, Osaka, Japan

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2011年 / 91卷 / 10期

关键词：

GaSb; electron irradiation; transmission electron microscopy; variant formation; DEPENDENCE; DAMAGE; ATOMS;

D O I：

10.1080/09500839.2011.608528

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural changes in GaSb (001) thin films upon low-energy electron (125 keV) irradiation have been studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473K domains of {110} variant, rotated 90 degrees from each other, were formed in the matrix. The average diameter of the domains was approximately 18 nm in the sample irradiated to a fluence of 4.8 x 10(24) electrons/m(2). It is considered that the domains are pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations.

引用

页码：676 / 681

页数：6

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